Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

التفاصيل البيبلوغرافية
العنوان: Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure
المؤلفون: Coh, Sinisa, Heeg, Tassilo, Haeni, J. H., Biegalski, M. D., Lettieri, J., Edge, L. F., O'Brien, K. E., Reiche, P., Uecker, R., Trolier-McKinstry, S., Schlom, Darrell G., Vanderbilt, David
المصدر: Phys. Rev. B 82, 064101 (2010)
سنة النشر: 2010
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered.
Comment: 17 pages, 9 figures, 4 tables. Supplementary information: http://link.aps.org/supplemental/10.1103/PhysRevB.82.064101 or http://www.physics.rutgers.edu/~sinisa/highk/supp.pdf
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevB.82.064101
URL الوصول: http://arxiv.org/abs/1005.2767
رقم الأكسشن: edsarx.1005.2767
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevB.82.064101