تقرير
Valley-Orbit Photocurrents in (111)-oriented Si-MOSFETs
| العنوان: | Valley-Orbit Photocurrents in (111)-oriented Si-MOSFETs |
|---|---|
| المؤلفون: | Karch, J., Tarasenko, S. A., Ivchenko, E. L., Kamann, J., Olbrich, P., Utz, M., Kvon, Z. D., Ganichev, S. D. |
| سنة النشر: | 2010 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current. Comment: 4 pages, 2 columns, 3 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/1010.4383 |
| رقم الأكسشن: | edsarx.1010.4383 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |