تقرير
Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe
| العنوان: | Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe |
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| المؤلفون: | Brüne, C., Liu, C. X., Novik, E. G., Hankiewicz, E. M., Buhmann, H., Chen, Y. L., Qi, X. L., Shen, Z. X., Zhang, S. C., Molenkamp, L. W. |
| المصدر: | Phys. Rev. Lett. 106, 126803 (2011) |
| سنة النشر: | 2011 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states. Comment: 7 pages, 6 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevLett.106.126803 |
| URL الوصول: | http://arxiv.org/abs/1101.2627 |
| رقم الأكسشن: | edsarx.1101.2627 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevLett.106.126803 |
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