تقرير
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
| العنوان: | Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry |
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| المؤلفون: | Lu, T. M., Bishop, N. C., Pluym, T., Means, J., Kotula, P. G., Cederberg, J., Tracy, L. A., Dominguez, J., Lilly, M. P., Carroll, M. S. |
| المصدر: | Appl. Phys. Lett.99, 043101 (2011) |
| سنة النشر: | 2011 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics, in contrast to previously demonstrated enhancement-mode SiGe/s-Si structures made with AuSb alloyed ohmics and atomic-layer-deposited dielectric. A modified implant, polysilicon formation and annealing conditions were utilized to minimize the thermal budget so that the buried s-Si layer would not be washed out by Ge/Si interdiffusion. Comment: 4 pages, 3 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.3615288 |
| URL الوصول: | http://arxiv.org/abs/1106.0337 |
| رقم الأكسشن: | edsarx.1106.0337 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.3615288 |
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