تقرير
Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
| العنوان: | Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ? |
|---|---|
| المؤلفون: | Jouault, B., Camara, N., Jabakhanji, B., Caboni, A., Consejo, C., Godignon, P., Maude, D. K., Camassel, J. |
| سنة النشر: | 2011 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the surface preparation. For temperatures below 40K, the gate is inefficient as the buried channel is frozen out. However, the carrier concentration in graphene remains very close to the value set at T\sim 40K. The absence of parallel conduction is evidenced by the observation of the half-integer quantum Hall effect at various concentrations at T\sim 4K. These observations pave the way to a better understanding of intrinsic properties of epitaxial graphene and are promising for applications such as quantum metrology. Comment: 3 pages |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/1106.5923 |
| رقم الأكسشن: | edsarx.1106.5923 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |