تقرير
Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces
| العنوان: | Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces |
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| المؤلفون: | Förg, B., Richter, C., Mannhart, J. |
| سنة النشر: | 2012 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Strongly Correlated Electrons |
| الوصف: | Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,{\deg}C. Comment: to be published in Applied Physics Letters |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.3682102 |
| URL الوصول: | http://arxiv.org/abs/1201.5953 |
| رقم الأكسشن: | edsarx.1201.5953 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.3682102 |
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