تقرير
Topological crystalline insulator states in Pb(1-x)Sn(x)Se
| العنوان: | Topological crystalline insulator states in Pb(1-x)Sn(x)Se |
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| المؤلفون: | Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T., Wojek, B. M., Berntsen, M. H., Tjernberg, O., Story, T. |
| المصدر: | Nature Materials 11, 1023-1027 (2012) |
| سنة النشر: | 2012 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions. Comment: v2: published revised manuscript (6 pages, 3 figures) and supplementary information (5 pages, 8 figures) |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1038/nmat3449 |
| URL الوصول: | http://arxiv.org/abs/1206.1705 |
| رقم الأكسشن: | edsarx.1206.1705 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1038/nmat3449 |
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