تقرير
Transport Measurement of Landau level Gaps in Bilayer Graphene
| العنوان: | Transport Measurement of Landau level Gaps in Bilayer Graphene |
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| المؤلفون: | Velasco Jr., J., Lee, Y., Zhao, Z., Jing, Lei, Kratz, P., Bockrath, Marc, Lau, C. N. |
| المصدر: | Nano Letters, 14, 1324 (2014) |
| سنة النشر: | 2013 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons |
| الوصف: | Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with high mobilities in the quantum Hall regime. By using bias as a spectroscopic tool, we measure the gap {\Delta} for the quantum Hall (QH) state at filling factor {\nu}={\pm}4 and -2. The single-particle gap for {\nu}=4 scales linearly with magnetic field B and is independent of the out-of-plane electric field E. For the symmetry-broken {\nu}=-2 state, the measured values of gap are 1.1 meV/T and 0.17 meV/T for singly-gated geometry and dual-gated geometry at E=0, respectively. The difference between the two values arises from the E-dependence of the gap, suggesting that the {\nu}=-2 state is layer polarized. Our studies provide the first measurements of the gaps of the broken symmetry QH states in BLG with well-controlled E, and establish a robust method that can be implemented for studying similar states in other layered materials. Comment: revised figures and discussion |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1021/nl4043399 |
| URL الوصول: | http://arxiv.org/abs/1303.3649 |
| رقم الأكسشن: | edsarx.1303.3649 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1021/nl4043399 |
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