Elemental Topological Insulator with a Tunable Fermi Level: Strained \alpha-Sn on InSb(001)

التفاصيل البيبلوغرافية
العنوان: Elemental Topological Insulator with a Tunable Fermi Level: Strained \alpha-Sn on InSb(001)
المؤلفون: Barfuss, A., Dudy, L., Scholz, M. R., Roth, H., Höpfner, P., Blumenstein, C., Landolt, G., Dil, J. H., Plumb, N. C., Radovic, M., Bostwick, A., Rotenberg, E., Fleszar, A., Bihlmayer, G., Wortmann, D., Li, G., Hanke, W., Claessen, R., Schäfer, J.
المصدر: Phys. Rev. Lett. 111 (2013) 157205
سنة النشر: 2013
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
الوصف: We report on the epitaxial fabrication and electronic properties of a topological phase in strained \alpha-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.
Comment: version 2 with supplementary information
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevLett.111.157205
URL الوصول: http://arxiv.org/abs/1308.0826
رقم الأكسشن: edsarx.1308.0826
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevLett.111.157205