تقرير
Epitaxial Growth of VO$_{2}$ by Periodic Annealing
| العنوان: | Epitaxial Growth of VO$_{2}$ by Periodic Annealing |
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| المؤلفون: | Tashman, J. W., Lee, J. H., Paik, H., Moyer, J. A., Misra, R., Mundy, J. A., Spila, T., Merz, T. A., Schubert, J., Muller, D. A., Schiffer, P., Schlom, D. G. |
| سنة النشر: | 2013 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change {\Delta}R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm. Comment: 25 pages, 6 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.4864404 |
| URL الوصول: | http://arxiv.org/abs/1310.5021 |
| رقم الأكسشن: | edsarx.1310.5021 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.4864404 |
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