High-fidelity preparation, gates, memory and readout of a trapped-ion quantum bit

التفاصيل البيبلوغرافية
العنوان: High-fidelity preparation, gates, memory and readout of a trapped-ion quantum bit
المؤلفون: Harty, T. P., Allcock, D. T. C., Ballance, C. J., Guidoni, L., Janacek, H. A., Linke, N. M., Stacey, D. N., Lucas, D. M.
المصدر: Phys. Rev. Lett. 113, 220501 (2014)
سنة النشر: 2014
المجموعة: Quantum Physics
مصطلحات موضوعية: Quantum Physics
الوصف: We implement all single-qubit operations with fidelities significantly above the minimum threshold required for fault-tolerant quantum computing, using a trapped-ion qubit stored in hyperfine "atomic clock" states of $^{43}$Ca$^+$. We measure a combined qubit state preparation and single-shot readout fidelity of 99.93%, a memory coherence time of $T^*_2=50$ seconds, and an average single-qubit gate fidelity of 99.9999%. These results are achieved in a room-temperature microfabricated surface trap, without the use of magnetic field shielding or dynamic decoupling techniques to overcome technical noise.
Comment: Supplementary Information included. 6 nines, 7 figures, 8 pages
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevLett.113.220501
URL الوصول: http://arxiv.org/abs/1403.1524
رقم الأكسشن: edsarx.1403.1524
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevLett.113.220501