In this paper we present a method for processing a hybrid Josephson junction on Co-doped BaFe2As2(Ba-122) single crystals with a thin film Pb-counter electrode and a barrier layer of TiOx. This includes the leveling and polishing of the crystals and structuring them with thin film techniques such as photo lithography, sputtering and ion beam etching (IBE). The junctions show hysteretical resistively and capacitively shunted junction (RCSJ)-like I-V characteristics with an IcRn-product of about 800uV.
