تقرير
Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices
| العنوان: | Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices |
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| المؤلفون: | Zervos, M., Viskadourakis, Z., Athanasopoulos, G., Flores, R., Conde, O., Giapintzakis, J. |
| المصدر: | Journal of Applied Physics 115, 033709 (2014) |
| سنة النشر: | 2014 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200K due to the onset of conduction along the Si / SiO2 interface related to tunneling of electrons from the Fe3O4 into the accumulation layer of holes at the Si / SiO2 interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 {\mu}V/K at 300K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K2m when the Fe3O4 layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe3O4 layer at 300 K, while the Fe3O4 / SiO2 / p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction. Comment: 5 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.4861729 |
| URL الوصول: | http://arxiv.org/abs/1406.1282 |
| رقم الأكسشن: | edsarx.1406.1282 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.4861729 |
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