تقرير
Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy
| العنوان: | Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy |
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| المؤلفون: | Bussmann, E., Rudolph, M., Subramania, G. S., Misra, S., Carr, S. M., Langlois, E., Dominguez, J., Pluym, T., Lilly, M. P., Carroll, M. S. |
| سنة النشر: | 2014 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures. Comment: The first two listed authors contributed equally to this work |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/1410.4793 |
| رقم الأكسشن: | edsarx.1410.4793 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |