تقرير
Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study
| العنوان: | Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study |
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| المؤلفون: | Pan, Y., Wu, D., Angevaare, J. R., Luigjes, H., Frantzeskakis, E., de Jong, N., van Heumen, E., Bay, T. V., Zwartsenberg, B., Huang, Y. K., Snelder, M., Brinkman, A., Golden, M. S., de Visser, A. |
| المصدر: | New J. Phys. 16, 123035(2014) |
| سنة النشر: | 2014 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$ single crystals with compositions around $x = 0.5$ and $y = 1.3$. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to $1 \mu$m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states. Comment: 16 pages, 6 figures, accepted for publication in New Journal of Physics |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/1367-2630/16/12/123035 |
| URL الوصول: | http://arxiv.org/abs/1411.2479 |
| رقم الأكسشن: | edsarx.1411.2479 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/1367-2630/16/12/123035 |
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