تقرير
Origins of GaN(0 0 0 1) surface reconstructions
| العنوان: | Origins of GaN(0 0 0 1) surface reconstructions |
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| المؤلفون: | Vezian, S., Semond, F., Massies, J., Bullock, D. W., Ding, Z., Thibado, P. M. |
| المصدر: | Surface Science 541, 242 (2003) |
| سنة النشر: | 2014 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are observed with RHEED by analyzing patterns while the substrate is exposed to a fixed NH3 flux or after depositing known amounts of Ga as a function of substrate temperature. In situ STM images reveal that only a few of these reconstructions yield long-range periodicity in real space. The controversial role of arsenic on Ga induced reconstructions was also investigated using two independent MBE chambers and X-ray photoelectron spectroscopy. Comment: 14 pages, 7 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1016/S0039-6028(03)00950-6 |
| URL الوصول: | http://arxiv.org/abs/1501.00143 |
| رقم الأكسشن: | edsarx.1501.00143 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1016/S0039-6028(03)00950-6 |
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