تقرير
Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation
| العنوان: | Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation |
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| المؤلفون: | Zion, E., Haran, A., Butenko, A. V., Wolfson, L., Kaganovskii, Yu., Havdala, T., Sharoni, A., Naveh, D., Richter, V., Kaveh, M., Kogan, E., Shlimak, I. |
| المصدر: | Graphene, Vol.4, No.3, 45 (2015) |
| سنة النشر: | 2015 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data. Comment: Latex, 5 pages, 5 eps Figures. As accepted for publication in Graphene |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.4236/graphene.2015.43005 |
| URL الوصول: | http://arxiv.org/abs/1501.04581 |
| رقم الأكسشن: | edsarx.1501.04581 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.4236/graphene.2015.43005 |
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