Silicon Quantum Dots with Counted Antimony Donor Implants

التفاصيل البيبلوغرافية
العنوان: Silicon Quantum Dots with Counted Antimony Donor Implants
المؤلفون: Singh, M., Pacheco, J. L., Perry, D., Garratt, E., Eyck, G. Ten, Bishop, N. C., Wendt, J. R., Manginell, R. P., Dominguez, J., Pluym, T., Luhman, D. R., Bielejec, E., Lilly, M. P., Carroll, M. S.
سنة النشر: 2015
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/1512.04593
رقم الأكسشن: edsarx.1512.04593
قاعدة البيانات: arXiv