تقرير
Pseudogap and superconductivity in two-dimensional doped charge-transfer insulators
| العنوان: | Pseudogap and superconductivity in two-dimensional doped charge-transfer insulators |
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| المؤلفون: | Fratino, L., Sémon, P., Sordi, G., Tremblay, A. -M. S. |
| المصدر: | Phys. Rev. B 93, 245147 (2016) |
| سنة النشر: | 2016 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Statistical Mechanics, Condensed Matter - Superconductivity |
| الوصف: | High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime using cellular dynamical mean-field theory with continuous-time quantum Monte Carlo as an impurity solver. We report the normal and superconducting phase diagram of this model as a function of doping, interaction strength and temperature. Upon hole doping of the charge-transfer insulator, the phase boundary between pseudogap and correlated metal consists of a first-order transition line at finite doping ending at a critical point, as in the one-band model. Beyond the endpoint, the phase boundary continues as a Widom crossover line, across which thermodynamic quantities peak. This phase boundary determines changes in the pairing mechanism and is an emergent phenomenon characteristic of doped Mott insulators, independent of many microscopic details. Broader implications are discussed. Comment: 6 pages, 4 figures and supplementary information; published version |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.93.245147 |
| URL الوصول: | http://arxiv.org/abs/1602.02280 |
| رقم الأكسشن: | edsarx.1602.02280 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevB.93.245147 |
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