تقرير
Transport mechanism through metal-cobaltite interfaces
العنوان: | Transport mechanism through metal-cobaltite interfaces |
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المؤلفون: | Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T. |
سنة النشر: | 2016 |
المجموعة: | Condensed Matter |
مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics |
الوصف: | The resistive switching (RS) properties as a function of temperature were studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$ substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties. Comment: 13 pages, 5 figures, to be published in APL. Corresponding author: C. Acha (acha@df.uba.ar) |
نوع الوثيقة: | Working Paper |
DOI: | 10.1063/1.4955204 |
URL الوصول: | http://arxiv.org/abs/1606.07974 |
رقم الأكسشن: | edsarx.1606.07974 |
قاعدة البيانات: | arXiv |
DOI: | 10.1063/1.4955204 |
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