Transport mechanism through metal-cobaltite interfaces

التفاصيل البيبلوغرافية
العنوان: Transport mechanism through metal-cobaltite interfaces
المؤلفون: Acha, C., Schulman, A., Boudard, M., Daoudi, K., Tsuchiya, T.
سنة النشر: 2016
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: The resistive switching (RS) properties as a function of temperature were studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$ substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.
Comment: 13 pages, 5 figures, to be published in APL. Corresponding author: C. Acha (acha@df.uba.ar)
نوع الوثيقة: Working Paper
DOI: 10.1063/1.4955204
URL الوصول: http://arxiv.org/abs/1606.07974
رقم الأكسشن: edsarx.1606.07974
قاعدة البيانات: arXiv