Strain-gradient mapping of semiconductor quantum dots

التفاصيل البيبلوغرافية
العنوان: Strain-gradient mapping of semiconductor quantum dots
المؤلفون: De Assis, P. -L, Yeo, I, Gloppe, A, Nguyen, H. A., Tumanov, D, Dupont-Ferrier, E, Malik, N. S., Dupuy, E, Claudon, J, Gérard, J. -M, Auffèves, Alexia, Arcizet, O, Richard, Maxime, Poizat, J. -Ph
المصدر: Phys. Rev. Lett. 118, 117401 (2017)
سنة النشر: 2016
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Other Condensed Matter
الوصف: In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum microscopes" have been demonstrated already for NV-centers embedded in diamond [1], and for single atoms within an ultracold gas [2]. In this work, we demonstrate a new method to determine non-destructively the position of randomly distributed semiconductor quantum dots (QDs) deeply embedded in a solid photonic waveguide. By setting the wire in an oscillating motion, we generate large stress gradients across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress [3-5] to infer their positions with an accuracy ranging from +/- 35 nm down to +/-1 nm for close-to-axis QDs.
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevLett.118.117401
URL الوصول: http://arxiv.org/abs/1607.06277
رقم الأكسشن: edsarx.1607.06277
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevLett.118.117401