Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires

التفاصيل البيبلوغرافية
العنوان: Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
المؤلفون: Puchtler, Tim J., Wang, Tong, Ren, Christopher X., Tang, Fengzai, Oliver, Rachel A., Taylor, Robert A., Zhu, Tongtong
سنة النشر: 2016
المجموعة: Condensed Matter
Quantum Physics
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Quantum Physics
الوصف: We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^2(0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.
نوع الوثيقة: Working Paper
DOI: 10.1021/acs.nanolett.6b03980
URL الوصول: http://arxiv.org/abs/1609.07973
رقم الأكسشن: edsarx.1609.07973
قاعدة البيانات: arXiv
الوصف
DOI:10.1021/acs.nanolett.6b03980