تقرير
Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
| العنوان: | Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors |
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| المؤلفون: | Kumar, Suhas, Davila, Noraica, Wang, Ziwen, Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A. L. David, Nishi, Yoshio, Williams, R. Stanley |
| سنة النشر: | 2017 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications. Comment: 5 pages 4 fgures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1039/C6NR07671H |
| URL الوصول: | http://arxiv.org/abs/1701.01784 |
| رقم الأكسشن: | edsarx.1701.01784 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1039/C6NR07671H |
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