Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

التفاصيل البيبلوغرافية
العنوان: Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface
المؤلفون: Kishi, J., Ohtsubo, Y., Nakamura, T., Yaji, K., Harasawa, A., Komori, F., Shin, S., Rault, J. E., Fèvre, P. Le, Bertran, F., Taleb-Ibrahimi, A., Nurmamat, M., Yamane, H., Ideta, S., Tanaka, K., Kimura, S.
المصدر: Phys. Rev. Materials 1, 064602 (2017)
سنة النشر: 2017
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science
الوصف: One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices.
Comment: 9 pages (4 figures for the main text, 7 for supplemental material). To be published in Physical Review Materials (Copyright is transferred to APS)
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevMaterials.1.064602
URL الوصول: http://arxiv.org/abs/1704.05258
رقم الأكسشن: edsarx.1704.05258
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevMaterials.1.064602