A bright nanowire single photon source based on SiV centers in diamond

التفاصيل البيبلوغرافية
العنوان: A bright nanowire single photon source based on SiV centers in diamond
المؤلفون: Marseglia, L., Saha, K., Ajoy, A., Schröder, T., Englund, D., Jelezko, F., Walsworth, R., Pacheco, J. L., Perry, D. L., Bielejec, E. S., Cappellaro, P.
سنة النشر: 2017
المجموعة: Physics (Other)
Quantum Physics
مصطلحات موضوعية: Physics - Applied Physics, Quantum Physics
الوصف: The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science.
Comment: 15 pages, 5 figures
نوع الوثيقة: Working Paper
DOI: 10.1364/OE.26.000080
URL الوصول: http://arxiv.org/abs/1708.05782
رقم الأكسشن: edsarx.1708.05782
قاعدة البيانات: arXiv