تقرير
A bright nanowire single photon source based on SiV centers in diamond
العنوان: | A bright nanowire single photon source based on SiV centers in diamond |
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المؤلفون: | Marseglia, L., Saha, K., Ajoy, A., Schröder, T., Englund, D., Jelezko, F., Walsworth, R., Pacheco, J. L., Perry, D. L., Bielejec, E. S., Cappellaro, P. |
سنة النشر: | 2017 |
المجموعة: | Physics (Other) Quantum Physics |
مصطلحات موضوعية: | Physics - Applied Physics, Quantum Physics |
الوصف: | The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science. Comment: 15 pages, 5 figures |
نوع الوثيقة: | Working Paper |
DOI: | 10.1364/OE.26.000080 |
URL الوصول: | http://arxiv.org/abs/1708.05782 |
رقم الأكسشن: | edsarx.1708.05782 |
قاعدة البيانات: | arXiv |
DOI: | 10.1364/OE.26.000080 |
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