Controlling $T_c$ of Iridium films using interfacial proximity effects

التفاصيل البيبلوغرافية
العنوان: Controlling $T_c$ of Iridium films using interfacial proximity effects
المؤلفون: Hennings-Yeomans, R., Chang, C. L., Ding, J., Drobizhev, A., Fujikawa, B. K., Han, S., Karapetrov, G., Kolomensky, Yu. G., Novosad, V., O'Donnell, T., Ouellet, J. L., Pearson, J., Polakovic, T., Reggio, D., Schmidt, B., Sheff, B., Smith, R. J., Wang, G., Welliver, B., Yefremenko, V. G.
سنة النشر: 2017
المجموعة: High Energy Physics - Experiment
Nuclear Experiment
Physics (Other)
مصطلحات موضوعية: Physics - Instrumentation and Detectors, High Energy Physics - Experiment, Nuclear Experiment
الوصف: High precision calorimetry using superconducting transition edge sensors requires the use of superconducting films with a suitable $T_c$, depending on the application. To advance high-precision macrocalorimetry, we require low-$T_c$ films that are easy to fabricate. A simple and effective way to suppress $T_c$ of superconducting Iridium through the proximity effect is demonstrated by using Ir/Pt bilayers as well as Au/Ir/Au trilayers. While Ir/Au films fabricated by applying heat to the substrate during Ir deposition have been used in the past for superconducting sensors, we present results of $T_c$ suppression on Iridium by deposition at room temperature in Au/Ir/Au trilayers and Ir/Pt bilayers in the range of $\sim$20-100~mK. Measurements of the relative impedance between the Ir/Pt bilayers and Au/Ir/Au trilayers fabricated show factor of $\sim$10 higher values in the Ir/Pt case. These new films could play a key role in the development of scalable superconducting transition edge sensors that require low-$T_c$ films to minimize heat capacity and maximize energy resolution, while keeping high-yield fabrication methods.
Comment: 5 journal pages, 4 figures
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/1711.03648
رقم الأكسشن: edsarx.1711.03648
قاعدة البيانات: arXiv