تقرير
Integer quantum Hall effect and topological phase transitions in silicene
| العنوان: | Integer quantum Hall effect and topological phase transitions in silicene |
|---|---|
| المؤلفون: | Liu, Y. L., Luo, G. X., Xu, N., Tian, H. Y., Ren, C. D. |
| المصدر: | Condens. Matter Phys., 2017, vol. 20, No. 4, 43701 |
| سنة النشر: | 2017 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Strongly Correlated Electrons |
| الوصف: | We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $\nu=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center $\nu=0$ Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus. Comment: 7 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.5488/CMP.20.43701 |
| URL الوصول: | http://arxiv.org/abs/1712.05348 |
| رقم الأكسشن: | edsarx.1712.05348 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.5488/CMP.20.43701 |
|---|