تقرير
Ba(Zn,Co)2As2: a II-II-V Diluted Ferromagnetic Semiconductor with N-type Carriers
| العنوان: | Ba(Zn,Co)2As2: a II-II-V Diluted Ferromagnetic Semiconductor with N-type Carriers |
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| المؤلفون: | Guo, Shengli, Man, Huiyuan, Ding, Cui, Zhao, Yao, Fu, Licheng, Gu, Yilun, Zhi, Guoxiang, Frandsen, Benjamin A., Cheung, Sky C., Guguchia, Zurab, Yamakawa, Kohtaro, Chen, Bin, Wang, Hangdong, Deng, Z., Jin, C. Q., Uemura, Yasutomo J., Ning, Fanlong |
| المصدر: | Phys. Rev. B 99, 155201 (2019) |
| سنة النشر: | 2017 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Superconductivity |
| الوصف: | Diluted ferromagnetic semiconductors (DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronics (spintronics) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in III-V (Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature $T_C$ of 230 K has been achieved in (Ba,K)(Zn,Mn)$_2$As$_2$. However, most DMSs, including (Ga,Mn)As, are p-type, i.e., the carriers that mediate ferromagnetism are holes. For practical applications, DMS with n-type carriers are also advantageous. Here we report the successful synthesis of a II-II-V diluted ferromagnetic semiconductor with n-type carriers, Ba(Zn,Co)$_2$As$_2$. Magnetization measurements show that the ferromagnetic transition occurs up to $T_{C} \sim$ 45 K. Hall effect and Seebeck effect measurements jointly confirm that the dominant carriers are electrons. Through muon spin relaxation ($\mu$SR), a volume sensitive magnetic probe, we have also confirmed that the ferromagnetism in Ba(Zn,Co)$_2$As$_2$ is intrinsic and the internal field is static. Comment: 8 pages, 6 figures. Developed work of 1403.4019 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.99.155201 |
| URL الوصول: | http://arxiv.org/abs/1712.06764 |
| رقم الأكسشن: | edsarx.1712.06764 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevB.99.155201 |
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