Band alignments of electronic energy structure in epitaxially grown \b{eta}-Ga2O3 layers

التفاصيل البيبلوغرافية
العنوان: Band alignments of electronic energy structure in epitaxially grown \b{eta}-Ga2O3 layers
المؤلفون: Zatsepin, D. A., Boukhvalov, D. W., Zatsepin, A. F., Kuznetsova, Yu. A., Gogova, D., Shur, V. Ya., Esin, A. A.
سنة النشر: 2018
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science
الوصف: Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure mapping was coupled to Density functional theory calculations.
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/1801.09451
رقم الأكسشن: edsarx.1801.09451
قاعدة البيانات: arXiv