Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices

التفاصيل البيبلوغرافية
العنوان: Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
المؤلفون: Fujita, Y., Yamada, M., Tsukahara, M., Naito, T., Yamada, S., Oki, S., Sawano, K., Hamaya, K.
المصدر: Phys. Rev. B 100, 024431 (2019)
سنة النشر: 2018
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
الوصف: We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influence of the spin-drift effect in the SC layer and the nonlinear electrical spin conversion at a biased FM/SC contact are discussed.
Comment: 10 pages, 7 figures, supplementary material
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevB.100.024431
URL الوصول: http://arxiv.org/abs/1803.08187
رقم الأكسشن: edsarx.1803.08187
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevB.100.024431