تقرير
Temperature effect on the coupling between coherent longitudinal phonons and plasmons in n- and p-type GaAs
العنوان: | Temperature effect on the coupling between coherent longitudinal phonons and plasmons in n- and p-type GaAs |
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المؤلفون: | Hu, Jianbo, Zhang, Hang, Sun, Yi, Misochko, Oleg V., Nakamura, Kazutaka G. |
سنة النشر: | 2018 |
المجموعة: | Condensed Matter |
مصطلحات موضوعية: | Condensed Matter - Materials Science |
الوصف: | The coupling between longitudinal optical (LO) phonons and plasmons plays a fundamental role in determining the performance of doped semiconductor devices. In this work, we report a comparative investigation into the dependence of the coupling on temperature and doping in n- and p-type GaAs by using ultrafast optical phonon spectroscopy. A suppression of coherent oscillations has been observed in p-type GaAs at lower temperature, strikingly different from n-type GaAs and other materials in which coherent oscillations are strongly enhanced by cooling. We attribute this unexpected observation to a cooling-induced elongation of the depth of the depletion layer which effectively increases the screening time of surface field due to a slow diffusion of photoexcited carriers in p-type GaAs. Such an increase breaks the requirement for the generation of coherent LO phonons and, in turn, LO phonon-plasmon coupled modes because of their delayed formation in time. Comment: 18 pages, 4 figures |
نوع الوثيقة: | Working Paper |
DOI: | 10.1103/PhysRevB.97.165307 |
URL الوصول: | http://arxiv.org/abs/1804.05221 |
رقم الأكسشن: | edsarx.1804.05221 |
قاعدة البيانات: | arXiv |
DOI: | 10.1103/PhysRevB.97.165307 |
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