Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures

التفاصيل البيبلوغرافية
العنوان: Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures
المؤلفون: de Oliveira, E. R. Cardozo, Pfenning, A., Guarin, E. D., Teodoro, M. D., Santos, E. C., Lopez-Richard, V., Marques, G. E., Worschech, L., Hartmann, F., Höfling, Sven
المصدر: Phys. Rev. B 98, 075302 (2018)
سنة النشر: 2018
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science
الوصف: We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from high to low and the EL on-off ratio is enhanced by 2 orders of magnitude compared to the current on-off ratio. By combining the EL and current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current-voltage and the EL, we are able to tune the EL on-off ratio by up to 6 orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current on and off states. This electroluminescence, combined with the unique RTD properties such as the negative differential resistance (NDR) and high frequency operation, enables the development of high speed functional opto-electronic devices and optical switches.
Comment: 6 pages, 6 figures
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevB.98.075302
URL الوصول: http://arxiv.org/abs/1806.06757
رقم الأكسشن: edsarx.1806.06757
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevB.98.075302