تقرير
Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot
| العنوان: | Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot |
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| المؤلفون: | Sigillito, A. J., Loy, J. C., Zajac, D. M., Gullans, M. J., Edge, L. F., Petta, J. R. |
| المصدر: | Phys. Rev. Applied 11, 061006 (2019) |
| سنة النشر: | 2019 |
| المجموعة: | Condensed Matter Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics |
| الوصف: | Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here, we demonstrate coherent spin control in a quadruple quantum dot fabricated using isotopically enriched 28Si. We tune the ground state charge configuration of the quadruple dot down to the single electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved using electric dipole spin resonance in a magnetic field gradient. We execute a resonant-CNOT gate between two adjacent spins in 270 ns. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevApplied.11.061006 |
| URL الوصول: | http://arxiv.org/abs/1903.05952 |
| رقم الأكسشن: | edsarx.1903.05952 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevApplied.11.061006 |
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