تقرير
Thick adherent diamond films on AlN with low thermal barrier resistance
| العنوان: | Thick adherent diamond films on AlN with low thermal barrier resistance |
|---|---|
| المؤلفون: | Mandal, Soumen, Cuenca, Jerome, Massabuau, Fabien, Yuan, Chao, Bland, Henry, Pomeroy, James W., Wallis, David, Batten, Tim, Morgan, David, Oliver, Rachel, Kuball, Martin, Williams, Oliver A. |
| سنة النشر: | 2019 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | Growth of $>$100 $\mu$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in non-diamond carbon in the initial layers of diamond grown on pre-treated AlN. The presence of non-diamond carbon has minimal effect on the interface between diamond and AlN. The surfaces studied with x-ray photoelectron spectroscopy (XPS) revealed a clear distinction between pre-treated and untreated samples. The surface aluminium goes from nitrogen rich environment to an oxygen rich environment after pre-treatment. Cross section transmission electron microscopy shows a clean interface between diamond and AlN. Thermal barrier resistance between diamond and AlN was found to be in the range of 16 m$^2$K/GW which is a large improvement on the current state-of-the-art. |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/1907.02481 |
| رقم الأكسشن: | edsarx.1907.02481 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |