تقرير
Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films
| العنوان: | Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films |
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| المؤلفون: | Li, Peiling, Cui, Jian, Zhou, Jiadong, Guo, Dong, Zhao, Zhenzheng, Yi, Jian, Fan, Jie, Ji, Zhongqing, Jing, Xiunian, Qu, Fanming, Yang, Changli, Lu, Li, Lin, Junhao, Liu, Zheng, Liu, Guangtong |
| المصدر: | Adv. Mater. 31, 1904641(2019) |
| سنة النشر: | 2019 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Superconductivity |
| الوصف: | The strong spin$-$orbit coupling (SOC) and numerous crystal phases in few$-$layer transition metal dichalcogenides (TMDCs) MX$_2$ (M$=$W, Mo, and X$=$Te, Se, S) has led to a variety of novel physics, such as Ising superconductivity and quantum spin Hall effect realized in monolayer 2H$-$ and Td$-$MX$_2$, respectively. Consecutive tailoring of the MX$_2$ structure from 2H to Td phase may realize the long$-$sought topological superconductivity in one material system by incorporating superconductivity and quantum spin Hall effect together. In this work, by combing Raman spectrum, X-ray photoelectron spectrum (XPS), scanning transmission electron microscopy imaging (STEM) as well as electrical transport measurements, we demonstrate that a consecutively structural phase transitions from Td to 1T$'$ to 2H polytype can be realized as the Se-substitution concentration increases. More importantly, the Se$-$substitution has been found to notably enhance the superconductivity of the MoTe$_2$ thin film, which is interpreted as the introduction of the two$-$band superconductivity. The chemical constituent induced phase transition offers a new strategy to study the s$_{+-}$ superconductivity and the possible topological superconductivity as well as to develop phase$-$sensitive devices based on MX$_2$ materials. Comment: 27 pages, 5 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1002/adma.201904641 |
| URL الوصول: | http://arxiv.org/abs/1907.03521 |
| رقم الأكسشن: | edsarx.1907.03521 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1002/adma.201904641 |
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