تقرير
All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
| العنوان: | All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology |
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| المؤلفون: | Bourdet, Léo, Hutin, Louis, Bertrand, Benoit, Corna, Andrea, Bohuslavskyi, Heorhii, Amisse, Anthony, Crippa, Alessandro, Maurand, Romain, Barraud, Sylvain, Urdampilleta, Matias, Bäuerle, Christopher, Meunier, Tristan, Sanquer, Marc, Jehl, Xavier, De Franceschi, Silvano, Niquet, Yann-Michel, Vinet, Maud |
| المصدر: | IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 ) |
| سنة النشر: | 2019 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range. Comment: arXiv admin note: substantial text overlap with arXiv:1912.09806 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1109/TED.2018.2870115 |
| URL الوصول: | http://arxiv.org/abs/1912.11403 |
| رقم الأكسشن: | edsarx.1912.11403 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1109/TED.2018.2870115 |
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