تقرير
Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide
| العنوان: | Fast magneto-ionic switching of interface anisotropy using yttria-stabilized zirconia gate oxide |
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| المؤلفون: | Lee, Ki-Young, Jo, Sujin, Tan, Aik Jun, Huang, Mantao, Choi, Dongwon, Park, Jung Hoon, Ji, Ho-Il, Son, Ji-Won, Chang, Joonyeon, Beach, Geoffrey S. D., Woo, Seonghoon |
| المصدر: | Nano Lett. 2020, 20, 5, 3435-3441 |
| سنة النشر: | 2020 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, tsw ~ 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve ~1 ms reliable (> 103 cycles) switching using yttria-stabilized zirconia (YSZ), which is ~ 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics. Comment: 19 pages, 3 figures - published in Nano Letters |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1021/acs.nanolett.0c00340 |
| URL الوصول: | http://arxiv.org/abs/2005.02005 |
| رقم الأكسشن: | edsarx.2005.02005 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1021/acs.nanolett.0c00340 |
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