تقرير
Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe$_{2}$
| العنوان: | Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe$_{2}$ |
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| المؤلفون: | Choi, B. K., Ulstrup, S., Gunasekera, S. M., Kim, J., Lim, S. Y., Moreschini, L., Oh, J. S., Chun, S. -H., Jozwiak, C., Bostwick, A., Rotenberg, E., Cheong, H., Lyo, I. -W., Mucha-Kruczynski, M., Chang, Y. J. |
| المصدر: | ACS Nano 14, 7880 (2020) |
| سنة النشر: | 2020 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe$_{2}$, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe$_{2}$, in contrast to the 2H materials, the out-of-plane transition metal $d_{z^{2}}$ and chalcogen $p_{z}$ orbitals do not contribute significantly to the top of the valence band which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe$_{2}$ using scanning tunneling spectroscopy and explore the implications on the gap following surface-doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe$_{2}$. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place amongst two-dimensional crystals. Comment: 37 pages (including Supporting Information), 7 figures in the main text |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1021/acsnano.0c01054 |
| URL الوصول: | http://arxiv.org/abs/2005.14525 |
| رقم الأكسشن: | edsarx.2005.14525 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1021/acsnano.0c01054 |
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