تقرير
Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices
| العنوان: | Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices |
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| المؤلفون: | Kamiya, Y., Miyoshi, T., Iwase, H., Inada, T., Mizushima, A., Mita, Y., Shimazoe, K., Tanaka, H., Kurachi, I., Arai, Y. |
| المصدر: | Nucl. Instrum. Methods A979, 164400 (2020)* |
| سنة النشر: | 2020 |
| المجموعة: | Physics (Other) |
| مصطلحات موضوعية: | Physics - Instrumentation and Detectors |
| الوصف: | We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~\mu$m in terms of a standard deviation of the line spread function. Comment: 6 pages, 7 figures, 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector - HSTD12 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1016/j.nima.2020.164400 |
| URL الوصول: | http://arxiv.org/abs/2006.05658 |
| رقم الأكسشن: | edsarx.2006.05658 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1016/j.nima.2020.164400 |
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