تقرير
Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction
| العنوان: | Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction |
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| المؤلفون: | Dhara, Sushovan, Jawa, Himani, Ghosh, Sayantan, Varghese, Abin, Lodha, Saurabh |
| سنة النشر: | 2020 |
| المجموعة: | Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics |
| الوصف: | Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first time, an NO2 gas sensor that leverages a gate tunable type II WSe2 (p)/MoS2 (n) heterojunction to realize a 4x enhancement in sensitivity, 8x lower limit of detection and improved dynamic response when compared to an MoS2 FET sensor on the same flake. Comprehensive sensing measurements over a range of analyte concentrations, gate biases and MoS2 flake thicknesses indicate a novel two-fold electrical response to NO2 exposure underlying the enhanced sensitivity of the heterojunction- (i) a series resistance change that leads to an exponential change in thermionic current at high bias, and, (ii) a carrier concentration change that leads to a linear change in interlayer recombination current near zero bias. The heterojunction diode also exhibits fast and tunable recovery under negative gate biasing. All-electrical (gate controlled) sensing and recovery operation at room temperature makes this a simple, low-overhead sensor. The ability to sense tri-nitro toluene (TNT) molecules down to a concentration of 80PPB highlights its potential as a comprehensive chemical sensing platform. Comment: Manuscript 22 pages, 7 figures: SI 12 pages, 11 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2009.11350 |
| رقم الأكسشن: | edsarx.2009.11350 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |