تقرير
Gate reflectometry in dense quantum dot arrays
| العنوان: | Gate reflectometry in dense quantum dot arrays |
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| المؤلفون: | Ansaloni, Fabio, Bohuslavskyi, Heorhii, Fedele, Federico, Rasmussen, Torbjørn, Brovang, Bertram, Berritta, Fabrizio, Heskes, Amber, Li, Jing, Hutin, Louis, Venitucci, Benjamin, Bertrand, Benoit, Vinet, Maud, Niquet, Yann-Michel, Chatterjee, Anasua, Kuemmeth, Ferdinand |
| المصدر: | New J. Phys. 25, 033023 (2023) |
| سنة النشر: | 2020 |
| المجموعة: | Condensed Matter Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics |
| الوصف: | Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2$\times$N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors. Comment: 13 pages including appendices and 9 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/1367-2630/acc126 |
| URL الوصول: | http://arxiv.org/abs/2012.04791 |
| رقم الأكسشن: | edsarx.2012.04791 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/1367-2630/acc126 |
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