تقرير
Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$
| العنوان: | Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$ |
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| المؤلفون: | Chen, Shuijin, Lou, Zhefeng, Zhou, Yuxing, Chen, Qin, Xu, Binjie, Du, Jianhua, Yang, Jinhu, Wang, Haangdong, Fang, Minghu |
| المصدر: | CHIN. PHYS. LETT. 38, 017202 (2021) |
| سنة النشر: | 2020 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Strongly Correlated Electrons |
| الوصف: | We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity $\rho_{xx}(T,H)$, Hall resistivity $\rho_{xy}(T,H)$, and magnetic susceptibility as a function of temperature and various magnetic fields for VAs$_2$ with a monoclinic crystal structure. The band structure calculations show that VAs$_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in $\rho_{xx}(T)$ measured at $H$ = 0 demonstrates that an additional magnetic impurity (V$^{4+}$, $S$ = 1/2) occurs in VAs$_2$ single crystals, evidenced by both the fitting of $\rho_{xx}(T)$ data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of $\rho_{xx}(T)$ emerge also in VAs$_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^3 4s^2$) element as a platform for studying the influence of magnetic impurities to the topological properties. Comment: 8 pages, 5 figures. arXiv admin note: text overlap with arXiv:2007.04814 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/0256-307X/38/1/017202 |
| URL الوصول: | http://arxiv.org/abs/2012.11997 |
| رقم الأكسشن: | edsarx.2012.11997 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/0256-307X/38/1/017202 |
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