تقرير
Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
| العنوان: | Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs |
|---|---|
| المؤلفون: | Shetty, A., Sfigakis, F., Mak, W. Y., Gupta, K. Das, Buonacorsi, B., Tam, M. C., Kim, H. S., Farrer, I., Croxall, A. F., Beere, H. E., Hamilton, A. R., Pepper, M., Austing, D. G., Studenikin, S. A., Sachrajda, A., Reimer, M. E., Wasilewski, Z. R., Ritchie, D. A., Baugh, J. |
| سنة النشر: | 2020 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed. Comment: 18 pages, 13 figures; one paragraph rephrased on page 8 |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2012.14370 |
| رقم الأكسشن: | edsarx.2012.14370 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |