One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor

التفاصيل البيبلوغرافية
العنوان: One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor
المؤلفون: Seredinski, A., Arnault, E. G., Costa, V. Z., Zhao, L., Larson, T. F. Q., Watanabe, K., Taniguchi, T., Amet, F., Newaz, A. K. M., Finkelstein, G.
سنة النشر: 2021
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.
Comment: 5 pages, 4 figures
نوع الوثيقة: Working Paper
DOI: 10.1063/5.0045009
URL الوصول: http://arxiv.org/abs/2101.06194
رقم الأكسشن: edsarx.2101.06194
قاعدة البيانات: arXiv