تقرير
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
| العنوان: | A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration |
|---|---|
| المؤلفون: | Li, R., Stuyck, N. I. Dumoulin, Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Elsayed, A., Shehata, M., Simion, G., Godfrin, C., Canvel, Y., Ivanov, Ts., Goux, L., Govoreanu, B., Radu, I. P. |
| المصدر: | 2020 IEEE International Electron Devices Meeting (IEDM 2020), 38.3.1-38.3.4 |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter Physics (Other) Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics, Quantum Physics |
| الوصف: | We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor. Comment: 2020 IEEE International Electron Devices Meeting (IEDM), December 12-18, 2020 |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2102.03929 |
| رقم الأكسشن: | edsarx.2102.03929 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |