تقرير
Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
| العنوان: | Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature |
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| المؤلفون: | Mohammadzadeh, A., Rehman, A., Kargar, F., Rumyantsev, S., Smulko, J. M., Knap, W., Lake, R. K., Balandin, A. A. |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons, Quantum Physics |
| الوصف: | We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics. Comment: 19 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/5.0055401 |
| URL الوصول: | http://arxiv.org/abs/2104.14051 |
| رقم الأكسشن: | edsarx.2104.14051 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/5.0055401 |
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