تقرير
Projected mushroom-type phase-change memory
| العنوان: | Projected mushroom-type phase-change memory |
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| المؤلفون: | Sarwat, Syed Ghazi, Philip, Timothy M., Chen, Ching-Tzu, Kersting, Benedikt, Bruce, Robert L, Cheng, Cheng-Wei, Li, Ning, Saulnier, Nicole, BrightSky, Matthew, Sebastian, Abu |
| المصدر: | Adv. Funct. Mater. 2021, 31, 2106547 |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here we investigate the projection mechanism in a prominent phase-change memory device architecture, namely mushroom-type phase-change memory. Using nanoscale projected Ge2Sb2Te5 devices we study the key attributes of state-dependent resistance, drift coefficients, and phase configurations, and using them reveal how these devices fundamentally work. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1002/adfm.202106547 |
| URL الوصول: | http://arxiv.org/abs/2105.13693 |
| رقم الأكسشن: | edsarx.2105.13693 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1002/adfm.202106547 |
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