تقرير
ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics
| العنوان: | ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics |
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| المؤلفون: | Ou, Yongxi, Yanez, Wilson, Xiao, Run, Stanley, Max, Ghosh, Supriya, Zheng, Boyang, Jiang, Wei, Huang, Yu-Sheng, Pillsbury, Timothy, Richardella, Anthony, Liu, Chaoxing, Low, Tony, Crespi, Vincent H., Mkhoyan, K. Andre, Samarth, Nitin |
| المصدر: | Nature Communications 13, 2972 (2022) |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device. Comment: Includes new data (ST-FMR) and calculations (spin Hall conductivity) |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1038/s41467-022-30738-1 |
| URL الوصول: | http://arxiv.org/abs/2107.08599 |
| رقم الأكسشن: | edsarx.2107.08599 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1038/s41467-022-30738-1 |
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