Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

التفاصيل البيبلوغرافية
العنوان: Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases
المؤلفون: Vicente-Arche, Luis M., Bréhin, Julien, Varotto, Sara, Cosset-Cheneau, Maxen, Mallik, Srijani, Salazar, Raphaël, Noël, Paul, Vaz, Diogo Castro, Trier, Felix, Bhattacharya, Suvam, Sander, Anke, Fèvre, Patrick Le, Bertran, François, Saiz, Guilhem, Ménard, Gerbold, Bergeal, Nicolas, Barthélémy, Agnès, Li, Hai, Lin, Chia-Ching, Nikonov, Dmitri E., Young, Ian A., Rault, Julien, Vila, Laurent, Attané, Jean-Philippe, Bibes, Manuel
المصدر: Adv. Mater. 202102102 (2021)
سنة النشر: 2021
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
الوصف: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.
نوع الوثيقة: Working Paper
DOI: 10.1002/adma.202102102
URL الوصول: http://arxiv.org/abs/2108.07479
رقم الأكسشن: edsarx.2108.07479
قاعدة البيانات: arXiv